Record Details

NBTI lifetime prediction in SiON p-MOSFETs by H/H2 Reaction-Diffusion(RD) and Dispersive hole trapping model

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title NBTI lifetime prediction in SiON p-MOSFETs by H/H2 Reaction-Diffusion(RD) and Dispersive hole trapping model
 
Creator DEORA, S
MAHETA, VD
MAHAPATRA, S
 
Subject bias temperature instability
i-dlin technique
interface-trap
material dependence
physical-mechanism
degradation
generation
stress
methodology
diffusion
nbti
sion
pno
pna
rtno
hole trapping
interface traps
reaction-diffusion (rd) model
 
Description I(DLIN) shift due to NBTI is measured using UF-OTF I(DLIN) method in PNO, RTNO and RTNO+PN SiON p-MOSFETs having a wide range of EOT and %N. Time evolution of IDLIN shift at different stress E(OX) and T is modeled from ultra-short to long stress time using non-dispersive H/H(2) RD model governed N(IT) and dispersive N(h) components. N(IT) and N(h) model parameters show consistent E(OX) and T dependent behavior across all devices. Finally, extrapolated tt(F) values are obtained for different E(OX) from conventional power-law fit and the proposed model, and are compared across different measurement delay. Inconsistencies associated with conventional power-law fit extrapolation method are highlighted, which justifies the use of proposed model.
 
Publisher IEEE
 
Date 2011-10-24T22:31:45Z
2011-12-15T09:11:49Z
2011-10-24T22:31:45Z
2011-12-15T09:11:49Z
2010
 
Type Proceedings Paper
 
Identifier 2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM,1105-1114
978-1-4244-5431-0
http://dx.doi.org/10.1109/IRPS.2010.5488665
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15534
http://hdl.handle.net/100/2306
 
Source International Reliability Physics Symposium,Monterey, CA,APR 10-14, 2011
 
Language English