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On the failure mechanism and current instabilities in RESURF type DeNMOS device under ESD conditions
DSpace at IIT Bombay
View Archive Info| Field | Value | |
| Title |
On the failure mechanism and current instabilities in RESURF type DeNMOS device under ESD conditions
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| Creator |
SHRIVASTAVA, M
SCHNEIDER, J BAGHINI, MS GOSSNER, H RAO, VR |
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| Subject |
cmos technologies
nmos behavior demos esd failure space charge buildup filamentation pulse-to-pulse instability |
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| Description |
We present 3D device modeling of RESURF or non-STI type DeNMOS device under ESD conditions. The impact of base push-out, pulse-to-pulse instability and electrical imbalance on the various phases of filamentation is discussed. A new phenomenon called "week NPN action" and the cause of early and fast failure is identified. A modification of the device is proposed which achieved an improvement of similar to 5X in failure threshold (I(T2)) and similar to 2X in ESD window without degrading its I/O performance.
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| Publisher |
IEEE
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| Date |
2011-10-24T22:59:28Z
2011-12-15T09:11:49Z 2011-10-24T22:59:28Z 2011-12-15T09:11:49Z 2010 |
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| Type |
Proceedings Paper
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| Identifier |
2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM,841-845
978-1-4244-5431-0 http://dx.doi.org/10.1109/IRPS.2010.5488723 http://dspace.library.iitb.ac.in/xmlui/handle/10054/15536 http://hdl.handle.net/100/2309 |
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| Source |
International Reliability Physics Symposium,Monterey, CA,APR 10-14, 2011
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| Language |
English
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