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On the differences between 3D filamentation and failure of N & P type drain extended MOS devices under ESD condition

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Title On the differences between 3D filamentation and failure of N & P type drain extended MOS devices under ESD condition
 
Creator SHRIVASTAVA, M
BYCHIKHIN, S
POGANY, D
SCHNEIDER, J
BAGHINI, MS
GOSSNER, H
GORNIK, E
RAO, VR
 
Subject demos
esd failure
space charge build-up
filamentation
 
Description We present differences in the ESD failure mechanisms, intrinsic behavior and various phases of filamentation of STI type DeNMOS and DePMOS devices using detailed 3D TCAD simulations, TLP and TIM experiments. The impact of localized base-push-out, power dissipation because of space charge build-up, regenerative bipolar triggering and various events during the current filamentation are compared. Measurements show that the absence of base push out in DePMOS device leads to similar to 2.5X higher I(T2) as compared to DeNMOS.
 
Publisher IEEE
 
Date 2011-10-24T23:11:11Z
2011-12-15T09:11:49Z
2011-10-24T23:11:11Z
2011-12-15T09:11:49Z
2010
 
Type Proceedings Paper
 
Identifier 2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM,480-484
978-1-4244-5431-0
http://dx.doi.org/10.1109/IRPS.2010.5488785
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15537
http://hdl.handle.net/100/2310
 
Source International Reliability Physics Symposium,Monterey, CA,APR 10-14, 2011
 
Language English