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Parameter extraction for MOS model 11 using particle swarm optimization

DSpace at IIT Bombay

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Title Parameter extraction for MOS model 11 using particle swarm optimization
 
Creator CHOPDE, AM
KHANDELWAL, S
THAKKER, RA
PATIL, MB
ANIL, KG
 
Description Efficient DC parameter extraction technique for MOS Model 11, level 1100 (MM11) is outlined. The parameters are extracted step-by-step depending upon the characteristics where they play a major role. We have used Particle Swarm Optimization (PSO) and Genetic Algorithm (GA) to extract parameters for NMOS device with 65 nm technology. To the best of the authors knowledge, this is the first application of PSO algorithm for MOSFET parameter extraction. It has been observed that PSO algorithm performs much better as compared to GA in terms of accuracy and consistency. The proposed extraction strategy has been verified for the same technology for 150 nm and 90 nm devices.
 
Publisher IEEE
 
Date 2011-10-26T04:12:24Z
2011-12-15T09:11:49Z
2011-10-26T04:12:24Z
2011-12-15T09:11:49Z
2007
 
Type Proceedings Paper
 
Identifier PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007,253-256
978-1-4244-1727-8
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15905
http://hdl.handle.net/100/2311
 
Source 14th International Workshop on the Physics of Semiconductor Devices,Mumbai, INDIA,DEC 17-20, 2007
 
Language English