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Influence of SiN composition on program and erase characteristics of SANOS-type flash memories

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Title Influence of SiN composition on program and erase characteristics of SANOS-type flash memories
 
Creator SANDHYA, C
GANGULY, U
APOORVA, B
OLSEN, C
SEUTTER, S
DATE, L
HUNG, R
VASI, J
MAHAPATRA, S
 
Subject elevated-temperatures
mnos structures
discharge
reliability
performance
devices
model
charge trap flash
sanos
silicon nitride
program-erase window
data retention
 
Description Composition of the silicon-nitride charge trap layer strongly impacts electron and hole trap properties. This significantly impacts charge trap flash memory performance and reliability. Important trade-offs between Program/Erase (P/E) levels (memory window) and retention loss is shown and critical trends identified. Increasing the Si-richness of the SiN layer improves memory window by increasing erase efficiency. E-state retention characteristics are improved but at the expense of higher P-state retention loss.
 
Publisher IEEE
 
Date 2011-10-25T15:20:40Z
2011-12-15T09:11:59Z
2011-10-25T15:20:40Z
2011-12-15T09:11:59Z
2009
 
Type Proceedings Paper
 
Identifier 2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY,41-44
978-1-4244-3831-0
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15754
http://hdl.handle.net/100/2412
 
Source 2nd International Workshop on Electron Devices and Semiconductor Technology,Bombay, INDIA,JUN 01-02, 2009
 
Language English