Record Details

Hydroxy-phenyl Zn(II) Porphyrin self-assembled monolayer as a diffusion barrier for copper-low k interconnect technology

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Hydroxy-phenyl Zn(II) Porphyrin self-assembled monolayer as a diffusion barrier for copper-low k interconnect technology
 
Creator ROY, U
KHADERBAD, MA
YEDUKONDALU, M
WALAWALKAR, MG
RAVIKANTH, M
MUKHERJI, S
RAO, VR
 
Subject bias-temperature stress
diffusion barrier
interconnect
low-k dielectric
self-assembled monolayer
 
Description In this paper, we have studied the application of metallated porphyrin self-assembled monolayer (SAM) as a copper diffusion barrier for low-k inter-metal dielectric (IMD) CMOS technologies. SAM formed on hydrogen silesquioxane (HSQ), which is a low-k dielectric, has been demonstrated to be effective in preventing diffusion of copper ions into the porous dielectric. This has been shown by fabricating Cu-HSQ-Si and Cu-SAM-HSQ-Si metal-insulator-semiconductor test structures. Bias-temperature stress (BTS) studies have been done to investigate the effectiveness of SAM as a diffusion barrier. Formation of SAM on HSQ has been characterized using Fourier Transform Infra-red Spectroscopy studies Thermogravimetric analysis (TGA) of hydroxyl-phenyl Zn(II) porphyrin has been used to verify thermal stability of the molecule under back-end-of-line (BEOL) process conditions.
 
Publisher IEEE
 
Date 2011-10-25T15:39:02Z
2011-12-15T09:12:00Z
2011-10-25T15:39:02Z
2011-12-15T09:12:00Z
2009
 
Type Proceedings Paper
 
Identifier 2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY,36-40
978-1-4244-3831-0
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15757
http://hdl.handle.net/100/2415
 
Source 2nd International Workshop on Electron Devices and Semiconductor Technology,Bombay, INDIA,JUN 01-02, 2009
 
Language English