Growth mechanism for vertical growth of nanopillars in progressive annealed HWCVD Grown silicon nanostructures
DSpace at IIT Bombay
View Archive InfoField | Value | |
Title |
Growth mechanism for vertical growth of nanopillars in progressive annealed HWCVD Grown silicon nanostructures
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Creator |
PATIL, TC
CHALCRABARTI, S |
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Subject |
nanocrystals
size dangling bonds hwcvd paramagnetic defects silicon nanostructure |
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Description |
Here we propose a growth mechanism for the vertically growing conical nanopillars in progressive annealed samples grown using Hot Wire CVD process. Paramagnetic defects are present in a-Si:H films grown at low temperatures (Ts
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Publisher |
IEEE
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Date |
2011-10-25T15:48:58Z
2011-12-15T09:12:00Z 2011-10-25T15:48:58Z 2011-12-15T09:12:00Z 2009 |
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Type |
Proceedings Paper
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Identifier |
2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009),132-135
978-1-4244-5073-2 http://dspace.library.iitb.ac.in/xmlui/handle/10054/15760 http://hdl.handle.net/100/2418 |
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Source |
4th International Conference on Computers and Devices for Communication,Kolkata, INDIA,DEC 14-16, 2009
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Language |
English
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