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Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique

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Title Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique
 
Creator MAJI, D
CRUPI, F
MAGNONE, P
GIUSI, G
PACE, C
SIMOEN, E
RAO, VR
 
Subject transistors
ge pmosfet
interface trap
oxide trap
dciv
 
Description The interface trap density of fresh TiN/TaN gated HfO(2)/SiO(2)/Si/cpi-Ge pMOSFETs is measured using the DCIV technique. Its temperature dependence is also discussed here. We observe a polarity dependent DCIV peak shift. The bias temperature stress induced interface trapped charge and oxide trapped charge shifts are also systematically investigated in this work.
 
Publisher IEEE
 
Date 2011-10-25T16:57:37Z
2011-12-15T09:12:02Z
2011-10-25T16:57:37Z
2011-12-15T09:12:02Z
2009
 
Type Proceedings Paper
 
Identifier 2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY,153-156
978-1-4244-3831-0
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15773
http://hdl.handle.net/100/2434
 
Source 2nd International Workshop on Electron Devices and Semiconductor Technology,Bombay, INDIA,JUN 01-02, 2009
 
Language English