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Dual layer Pt metal nanocrystal flash for multi-level-cell NAND application

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Title Dual layer Pt metal nanocrystal flash for multi-level-cell NAND application
 
Creator SINGH, PK
BISHT, G
MAHAPATRA, S
HOFMANN, R
SINGH, K
 
Subject memory
metal nanocrystal
non-volatile memory
nand
multi level cell
 
Description Most of the current high-density Flash cells use multi-level-cell (MLC) technology to store 2-bits/cell to increase memory density. In this work, dual layer metal nanocrystal (NC) flash EEPROM device, with large memory window, good retention and 10(4) cycle endurance is reported. High-temperature retention, gate bias accelerated retention, read disturb and post-cycling retention measurements show excellent reliability of the NC devices which make them suitable for the MLC application.
 
Publisher IEEE
 
Date 2011-10-25T17:11:16Z
2011-12-15T09:12:02Z
2011-10-25T17:11:16Z
2011-12-15T09:12:02Z
2009
 
Type Proceedings Paper
 
Identifier 2009 IEEE INTERNATIONAL MEMORY WORKSHOP,78-81
978-1-4244-3761-0
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15775
http://hdl.handle.net/100/2437
 
Source IEEE International Memory Workshop,Monterey, CA,MAY 10-14, 2009
 
Language English