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Filament study of sti type drain extended nmos device using transient interferometric mapping

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Title Filament study of sti type drain extended nmos device using transient interferometric mapping
 
Creator SHRIVASTAVA, M
BYCHIKHIN, S
POGANY, D
SCHNEIDER, J
BAGHINI, MS
GOSSNER, H
GORNIK, E
RAO, VR
 
Description We present filament behavior of STI type DeNMOS devices using detailed Transient Interferometric Mapping experiments and 3D TCAD simulations. Device behavior at different TLP currents is discussed. The impact of localized base-push-out, power dissipation because of space charge build-up, regenerative NPN action and various events during the current filamentation are explored. By uniform turn-on of the device during base push-out the failure current could be improved by more than 2X.
 
Publisher IEEE
 
Date 2011-10-25T17:29:08Z
2011-12-15T09:12:02Z
2011-10-25T17:29:08Z
2011-12-15T09:12:02Z
2009
 
Type Proceedings Paper
 
Identifier 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING,387-390
978-1-4244-5639-0
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15777
http://hdl.handle.net/100/2439
 
Source IEEE International Electron Devices Meeting (IEDM 2009),Baltimore, MD,DEC 07-09, 2009
 
Language English