Record Details

Recent advances in charge trap flash memories

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Recent advances in charge trap flash memories
 
Creator SANDHYA, C
SINGH, PK
GUPTA, S
ROHRA, H
SHIVATHEJA, M
GANGULY, U
HOFMANN, R
MUKHOPADHYAY, G
MAHAPATRA, S
VASI, J
 
Subject metal nanocrystal memories
performance
fabrication
device
program/erase
reliability
retention
operation
charge trap flash
sonos
nanocrystal
 
Description This paper reviews recent advances in Charge Trap Flash (CTF) memories. CTFs are predicted to replace the traditional floating-gate flash devices beyond the 32 nm node. The paper focuses on work done at IIT Bombay in the areas of both nitride-based SONOS devices as well as nanocrystal (NC)-based devices. For SONOS devices, results are presented for optimization of the nitride layer to obtain the best characteristics, and the simulation of the program/erase transients. For NC devices, experimental characteristics of single and dual layer cells, as well as simulation results are presented.
 
Publisher IEEE
 
Date 2011-10-25T20:31:44Z
2011-12-15T09:12:07Z
2011-10-25T20:31:44Z
2011-12-15T09:12:07Z
2009
 
Type Proceedings Paper
 
Identifier 2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY,192-196
978-1-4244-3831-0
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15813
http://hdl.handle.net/100/2480
 
Source 2nd International Workshop on Electron Devices and Semiconductor Technology,Bombay, INDIA,JUN 01-02, 2009
 
Language English