ICAR Research Data Repository for Knowledge Management
A comprehensive study of flicker noise in plasma nitrided SiON p-MOSFETs : process dependence of pre-existing and NBTI stress generated trap distribution profiles
DSpace at IIT Bombay
View Archive Info| Field | Value | |
| Title |
A comprehensive study of flicker noise in plasma nitrided SiON p-MOSFETs : process dependence of pre-existing and NBTI stress generated trap distribution profiles
|
|
| Creator |
KAPILA, G
GOYAL, N MAHETA, VD OLSEN, C AHMED, K MAHAPATRA, S |
|
| Description |
Flicker noise is studied in SiON p-MOSFETs before and after NBTI stress. Pre-stress noise magnitude and slope are correlated and used to verify N density distribution in gate dielectric. Post-stress noise magnitude and slope are used to explore distribution of trap generation during NBTI stress, and independently verified by using MFCP measurements. Consequence of N distribution (in SiON) on NBTI stress and recovery results is shown.
|
|
| Publisher |
IEEE
|
|
| Date |
2011-10-25T22:36:38Z
2011-12-15T09:12:12Z 2011-10-25T22:36:38Z 2011-12-15T09:12:12Z 2008 |
|
| Type |
Proceedings Paper
|
|
| Identifier |
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST,103-106
978-1-4244-2377-4 http://dspace.library.iitb.ac.in/xmlui/handle/10054/15835 http://hdl.handle.net/100/2523 |
|
| Source |
IEEE International Electron Devices Meeting,San Francisco, CA,DEC 15-17, 2008
|
|
| Language |
English
|
|