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Highly linear and efficient AlGaAs/GaAs HBT power amplifier with integrated linearizer

DSpace at IIT Bombay

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Field Value
 
Title Highly linear and efficient AlGaAs/GaAs HBT power amplifier with integrated linearizer
 
Creator MRUNAL, AK
SHIRASGAONKAR, M
PATRIKA, R
 
Subject heterojunction bipolar transistor
linearizer monolithic microwave integrated circuits
power amplifier
schottky diode
 
Description This paper gives the description of a novel linearization technique using schottky diode as an active linearizer thereby improving the gain compression and reducing nonlinear phase distortion in AlGaAs/GaAs heterojunction bipolar transistor (HBT). This leads to highly linear and efficient amplification of the QPSK, OFDM. A two stage power amplifier using AlGaAs/GaAs HBT process exhibits an output power (@PldB) of 25dBm and power added efficiency as high as 43%.
 
Publisher IEEE
 
Date 2011-10-26T11:48:36Z
2011-12-15T09:12:19Z
2011-10-26T11:48:36Z
2011-12-15T09:12:19Z
2006
 
Type Proceedings Paper
 
Identifier 2006 IEEE Asia Pacific Conference on Circuits and Systems,1442-1445
978-1-4244-0386-8
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15999
http://hdl.handle.net/100/2598
 
Source IEEE Asia Pacific Conference on Circuits and Systems,Singapore, SINGAPORE,DEC 04-07, 2006
 
Language English