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Transmission electron microscopy studies on RF sputtered copper ferrite thin films

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Title Transmission electron microscopy studies on RF sputtered copper ferrite thin films
 
Creator KULKARNI, PD
PRASAD, S
SAMAJDAR I
VENKATARAMANI, N
KRISHNAN, R
 
Description Copper ferrite thin films were rf sputtered at a power of 50W. The as deposited films were annealed in air at 800 degrees C and slow cooled. The transmission electron microscope (TEM) studies were carried out on as deposited as well as on slow cooled film. Significantly larger defect concentration, including stacking faults, was observed in 50W as deposited films than the films deposited at a higher rf power of 200W. The film annealed at 800 degrees C and then slow cooled showed an unusual grain growth upto 180nm for a film thickness of similar to 240nm. These grains showed Kikuchi pattern.
 
Publisher AMER CERAMIC SOC
 
Date 2011-10-26T16:47:08Z
2011-12-15T09:12:25Z
2011-10-26T16:47:08Z
2011-12-15T09:12:25Z
2005
 
Type Proceedings Paper
 
Identifier NINTH INTERNATIONAL CONFERENCE ON FERRITES (ICF-9),165-169
1-57498-218-4
http://dspace.library.iitb.ac.in/xmlui/handle/10054/16065
http://hdl.handle.net/100/2656
 
Source 9th International Conference on Ferrites (ICF-9),San Francisco, CA,AUG 22-27, 2004
 
Language English