ICAR Research Data Repository for Knowledge Management
Understanding the NBTI degradation in halo-doped channel p-MOSFETs
DSpace at IIT Bombay
View Archive Info| Field | Value | |
| Title |
Understanding the NBTI degradation in halo-doped channel p-MOSFETs
|
|
| Creator |
JHA, NK
RAO, VR |
|
| Subject |
bias-temperature instability
|
|
| Description |
Role of initial interface damage for NBTI degradation has been examined for short channel MOSFET devices. In this paper we present a detailed study of the role of initial silicon-oxide interface quality on the NBTI degradation. Hole density and oxide fields are important parameters responsible for NBTI degradation. Our results show that NBTI degradation is independent of initial interface quality.
|
|
| Publisher |
IEEE
|
|
| Date |
2011-10-26T18:33:16Z
2011-12-15T09:12:27Z 2011-10-26T18:33:16Z 2011-12-15T09:12:27Z 2004 |
|
| Type |
Proceedings Paper
|
|
| Identifier |
IPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS,311-314
0-7803-8454-7 http://dspace.library.iitb.ac.in/xmlui/handle/10054/16089 http://hdl.handle.net/100/2677 |
|
| Source |
11th International Symposium on the Physical and Failure Analysis of Integrated Circuits,Hsinchu, TAIWAN,JUL 05-08, 2004
|
|
| Language |
English
|
|