Record Details

Chemical vapor deposition precursors for high dielectric oxides: zirconium and hafnium oxide

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Chemical vapor deposition precursors for high dielectric oxides: zirconium and hafnium oxide
 
Creator WALAWALKAR, MG
KOTTANTHARAYIL, A
RAO, VR
 
Subject cvd precursors
hafnia
high dialectric oxides
oxide precursors
zirconia
atomic-layer-deposition
liquid-injection mocvd
hfo2 thin-films
tetrakis-diethylamido-hafnium
carbon-free precursor
dioxide films
gate dielectrics
zro2 films
alkoxide precursors
organometallic compounds
 
Description High dielectric oxides namely ZrO2 and HfO2 have gained a lot of importance as they are candidates in the electronic industry in the form of CMOS technology. A complete review of the literature examples of the precursors employed in the deposition of the thin films of these metal oxides, followed by methodology to design precursors with desirable physicochemical properties have been described in this review article.
 
Publisher TAYLOR & FRANCIS INC
 
Date 2011-10-12T13:34:32Z
2011-12-15T09:16:09Z
2011-10-12T13:34:32Z
2011-12-15T09:16:09Z
2009
 
Type Review
 
Identifier SYNTHESIS AND REACTIVITY IN INORGANIC METAL-ORGANIC AND NANO-METAL CHEMISTRY,39(6)331-340
1553-3174
http://dx.doi.org/10.1080/15533170903094964
http://dspace.library.iitb.ac.in/xmlui/handle/10054/13785
http://hdl.handle.net/100/3023
 
Language en