Silicon quantum dots growth in sin(x) dielectric: a review
DSpace at IIT Bombay
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Title |
Silicon quantum dots growth in sin(x) dielectric: a review
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Creator |
PANCHAL, AK
RAI, DK MATHEW, M SOLANKI, CS |
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Subject |
si-qd
sin(x) mis structure tem pl ftir sims xrd c-v i-v chemical-vapor-deposition transmission electron-microscopy double-barrier structures nitride films optical-properties capacitance-voltage annealing temperature si3n4 films thin-films nanocrystals |
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Description |
This paper reviews research works carried out on silicon quantum dots (Si-QDs) embedded in the silicon nitride (SiN(x)) dielectric matrix films with different fabrication techniques and different characteristics. The advantages of SiN(x) as a dielectric compared to silicon dioxide (SiO(2)) for Si-QDs from a device point of view are discussed. Various fabrication techniques along with different optimized deposition conditions are summarized. The typical results of structural characteristics of the films with Raman spectroscopy and Transmission Electron Microscopy (TEM) are discussed. The origin of photoluminescence (PL) from the films and the chemical compositional analysis such as X-Ray Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR) and Secondary Ion Mass Spectroscopy ( SIMS) analysis of the films are also made available in brief. The charge conduction mechanism in the films with metal-insulator-semiconductor (MIS) structure, with their electrical characterization like capacitance-voltage (C-V) and current-voltage (I-V) measurements are presented.
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Publisher |
WORLD SCIENTIFIC PUBL CO PTE LTD
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Date |
2011-10-13T20:28:49Z
2011-12-15T09:16:13Z 2011-10-13T20:28:49Z 2011-12-15T09:16:13Z 2009 |
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Type |
Review
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Identifier |
NANO,4(5)265-279
1793-2920 http://dx.doi.org/10.1142/S1793292009001770 http://dspace.library.iitb.ac.in/xmlui/handle/10054/13841 http://hdl.handle.net/100/3048 |
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Language |
en
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