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Silicon quantum dots growth in sin(x) dielectric: a review

DSpace at IIT Bombay

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Title Silicon quantum dots growth in sin(x) dielectric: a review
 
Creator PANCHAL, AK
RAI, DK
MATHEW, M
SOLANKI, CS
 
Subject si-qd
sin(x)
mis structure
tem
pl
ftir
sims
xrd
c-v
i-v
chemical-vapor-deposition
transmission electron-microscopy
double-barrier structures
nitride films
optical-properties
capacitance-voltage
annealing temperature
si3n4 films
thin-films
nanocrystals
 
Description This paper reviews research works carried out on silicon quantum dots (Si-QDs) embedded in the silicon nitride (SiN(x)) dielectric matrix films with different fabrication techniques and different characteristics. The advantages of SiN(x) as a dielectric compared to silicon dioxide (SiO(2)) for Si-QDs from a device point of view are discussed. Various fabrication techniques along with different optimized deposition conditions are summarized. The typical results of structural characteristics of the films with Raman spectroscopy and Transmission Electron Microscopy (TEM) are discussed. The origin of photoluminescence (PL) from the films and the chemical compositional analysis such as X-Ray Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR) and Secondary Ion Mass Spectroscopy ( SIMS) analysis of the films are also made available in brief. The charge conduction mechanism in the films with metal-insulator-semiconductor (MIS) structure, with their electrical characterization like capacitance-voltage (C-V) and current-voltage (I-V) measurements are presented.
 
Publisher WORLD SCIENTIFIC PUBL CO PTE LTD
 
Date 2011-10-13T20:28:49Z
2011-12-15T09:16:13Z
2011-10-13T20:28:49Z
2011-12-15T09:16:13Z
2009
 
Type Review
 
Identifier NANO,4(5)265-279
1793-2920
http://dx.doi.org/10.1142/S1793292009001770
http://dspace.library.iitb.ac.in/xmlui/handle/10054/13841
http://hdl.handle.net/100/3048
 
Language en