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Small signal characteristics of thin film single halo SOI MOSFET for mixed mode applications

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Title Small signal characteristics of thin film single halo SOI MOSFET for mixed mode applications
 
Creator NAJEEB-UD-DIN HAKIM
RAMGOPAL RAO, V
VASI, J
 
Subject mosfet
doping profiles
silicon-on-insulator
semiconductor device models
mixed analogue digital
integrated circuits
 
Description In this paper, we report a study on the small signal characterization and simulation of single halo (SH) thin film silicon-on-insulators (SOI) nMOSFETs for analog and mixed signal applications. The single halo structure has a high pocket impurity concentration near the source end of the channel and low impurity concentration in the rest of the channel. Besides excellent DC output characteristics, the experimental characterization results of these devices show better Vth-L roll-off, low DIBL, higher breakdown voltages and kink free operation. Small signal characterization of these devices shows higher AC transconductance, higher output resistance and better dynamic intrinsic gain (gmRo) in comparison with the conventional (CON) homogeneously doped SOI MOSFETs. Also, the low drain junction capacitance as a result of low impurity concentration near the drain region is beneficial for improved circuit performance.
 
Publisher IEEE
 
Date 2008-12-08T09:14:04Z
2011-11-27T18:22:51Z
2011-12-15T09:56:09Z
2008-12-08T09:14:04Z
2011-11-27T18:22:51Z
2011-12-15T09:56:09Z
2003
 
Type Article
 
Identifier Proceedings of the 16th International Conference on VLSI Design, Calcutta, India, 4-8 January 2003, 110-115
0-7695-1868-0
10.1109/ICVD.2003.1183123
http://hdl.handle.net/10054/231
http://dspace.library.iitb.ac.in/xmlui/handle/10054/231
 
Language en