Record Details

Flexible PV technology development program at IIT Bombay

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Flexible PV technology development program at IIT Bombay
 
Creator DUTTAGUPTA, SP
 
Subject amorphous silicon
chemical vapor deposition
elemental semiconductors
solar cells
chemical vapor deposition
 
Description This paper describes the ongoing flexible PV technology program at the Indian Institute of Technology Bombay. Flexible solar cells are fabricated by depositing amorphous silicon (a-Si) on stainless steel substrate. We have relied on hot-wire CVD technology to deposit films at 110 C, since conventional PECVD processes have proven to be inadequate at that temperature. The primary requirement was a high doping concentration of the p-type and n-type a-Si layers. The efficiency of the single-junction PV cells under simulated AM1.5 global radiation initially was 2.8%, which improved to 4.8% following optimization. Further improvements in efficiency will require development of a technique for low temperature texturing of the transparent conducting oxide film.
 
Publisher IEEE
 
Date 2008-12-24T04:18:25Z
2011-11-28T03:46:17Z
2011-12-15T09:56:19Z
2008-12-24T04:18:25Z
2011-11-28T03:46:17Z
2011-12-15T09:56:19Z
2003
 
Type Article
 
Identifier Proceedings of the 15th Biennial University/Government/Industry Microelectronics Symposium, Boise, USA, 30 June-2 July 2003, 362-363
0-7803-7972-1
http://hdl.handle.net/10054/490
http://dspace.library.iitb.ac.in/xmlui/handle/10054/490
 
Language en