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100 nm channel length MNSFETs using a jet vapor deposited ultra-thin silicon nitride gate dielectric

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Title 100 nm channel length MNSFETs using a jet vapor deposited ultra-thin silicon nitride gate dielectric
 
Creator MAHAPATRA, S
RAMGOPAL RAO, V
MANJULA RANI, KN
PARIKH, CD
VASI, J
CHENG, B
KHARE, M
WOO, JCS
 
Subject misfet
dielectric thin films
hot carriers
interface structure
silicon compounds
vapour deposited coatings
 
Description Metal-nitride-semiconductor (MNS) FETs with channel lengths down to 100 nm with a novel jet vapor deposited (JVD) SiN insulator as gate dielectric are fabricated and characterized for their electrical performance. By employing the charge pumping technique, the SiN interface quality and its effect on the transistor performance are evaluated. We show that, compared to conventional SiO2 MOSFETs, the SiN devices show lower gate leakage current, competitive drain current drive and transconductance, good interface quality, and reduced hot-carrier degradation.
 
Publisher IEEE
 
Date 2008-12-08T06:29:01Z
2011-11-27T20:13:00Z
2011-12-15T09:56:25Z
2008-12-08T06:29:01Z
2011-11-27T20:13:00Z
2011-12-15T09:56:25Z
1999
 
Type Article
 
Identifier Proceedings of the Symposium on VLSI Technology Digest of Technical Papers, Kyoto, Japan, 14-16 June 1999, 79-80
4-930813-93-X
10.1109/VLSIT.1999.799349
http://hdl.handle.net/10054/223
http://dspace.library.iitb.ac.in/xmlui/handle/10054/223
 
Language en