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Reliability of ultrathin JVD silicon nitride MNSFETs under high field stressing

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Title Reliability of ultrathin JVD silicon nitride MNSFETs under high field stressing
 
Creator MANJULA RANI, KN
RAMGOPAL RAO, V
VASI, J
 
Subject misfet
dielectric materials
interface states
semiconductor device reliability
 
Description In this paper, we study the reliability of n-channel Metal-Nitride-Silicon FETs fabricated using ultrathin Jet Vapor Deposited (JVD) Silicon Nitride gate dielectric under constant voltage stressing. Due to the stress, shifts in threshold voltage and transconductance as well as interface state generation are observed. Our study shows that degradation is polarity dependent. MNSFETs show lower degradation when the applied stress voltage is positive. We have also compared the performance of MNSFETs with conventional MOSFETs under identical stress conditions. Under positive stressing, MNSFETs clearly outperform the MOSFETs but under negative stressing MNSFETs show more degradation.
 
Publisher IEEE
 
Date 2008-12-12T04:52:21Z
2011-11-27T11:50:48Z
2011-12-15T09:56:29Z
2008-12-12T04:52:21Z
2011-11-27T11:50:48Z
2011-12-15T09:56:29Z
2003
 
Type Article
 
Identifier Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits, Singapore, 7-11 July 2003, 168-172
0-7803-7722-2
http://hdl.handle.net/10054/314
http://dspace.library.iitb.ac.in/xmlui/handle/10054/314
 
Language en