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Analog circuit performance issues with aggressively scaled gate oxide CMOS technologies

DSpace at IIT Bombay

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Field Value
 
Title Analog circuit performance issues with aggressively scaled gate oxide CMOS technologies
 
Creator NARASIMHULU, K
RAMGOPAL RAO, V
 
Subject amplifiers (electronic)
dielectric materials
leakage currents
gates (transistor)
 
Description MOS transistors with sub 100 nm channel lengths need a gate oxide thickness in the range of 1-2 nm to combat the short channel effects. However at these gate dielectric thicknesses, the gate current is no longer negligible. In this paper, we report the device analog behavior with extremely scaled oxides for integrating mixed signal circuits using the scaled digital CMOS technologies. We show the performance of common source amplifiers and current mirror circuits with these technologies. Our results also show that though thin oxides result in good voltage gains of amplifier circuits, the increased gate leakage degrades the performance of current mirror circuits. We also analyze the performance of different classes of current mirror circuits in the presence of gate leakage and provide broad guidelines for analog circuit design in the presence of gate leakage.
 
Publisher IEEE
 
Date 2008-12-16T11:34:12Z
2011-11-27T13:03:57Z
2011-12-15T09:56:30Z
2008-12-16T11:34:12Z
2011-11-27T13:03:57Z
2011-12-15T09:56:30Z
2006
 
Type Article
 
Identifier Proceedings of the 19th International Conference on VLSI Design, Hyderabad, India, 3-7 January 2006, 1-6
0-7695-2502-4
10.1109/VLSID.2006.84
http://hdl.handle.net/10054/343
http://dspace.library.iitb.ac.in/xmlui/handle/10054/343
 
Language en