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Gate insulator process dependent NBTI in SiON p-MOSFETs

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Title Gate insulator process dependent NBTI in SiON p-MOSFETs
 
Creator MAHAPATRA, S
MAHETA, VD
 
Subject integrated circuits
thermodynamic stability
negative temperature coefficient
mosfet devices
 
Description The material dependence of NBTI in SiON p-MOSFETs is studied using the UF-OTF IDLIN method. It is shown that the N density at the Si/SiON interface plays a very crucial role in determining the magnitude as well as the time, temperature and field dependence of NBTI. The relative contribution of interface trap generation and hole trapping to overall degradation is qualitatively discussed.
 
Publisher IEEE
 
Date 2009-01-05T03:28:58Z
2011-11-28T04:44:27Z
2011-12-15T09:56:37Z
2009-01-05T03:28:58Z
2011-11-28T04:44:27Z
2011-12-15T09:56:37Z
2008
 
Type Article
 
Identifier Proceedings of the 9th International Conference on Solid-State and Integrated-Circuit Technology, Beijing, China, 20-23 October 2008, 616-619
978-1-4244-2185-5
10.1109/ICSICT.2008.4734620
http://hdl.handle.net/10054/536
http://dspace.library.iitb.ac.in/xmlui/handle/10054/536
 
Language en