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Reliability studies on sub 100 nm SOI-MNSFETs

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Title Reliability studies on sub 100 nm SOI-MNSFETs
 
Creator MAHAPATRA, S
RAMGOPAL RAO, V
VASI, J
CHENG, B
WOO, JCS
 
Subject misfet
hot carriers
low-power electronics
semiconductor device reliability
silicon-on-insulator
vapour deposited coatings
 
Description SOI MNSFETs with channel lengths down to 100 nm and having a Jet Vapor Deposited (JVD) silicon nitride (Si3N4) gate dielectric are fabricated and characterized. The JVD MNSFETs show comparable performance in comparison to conventional SiO2 SOI-MOSFETs, in terms of low gate leakage, Si3N4/Si interface quality and Ion/I off ratio. In addition, the MNSFETs show better hot carrier reliability compared to conventional MOSFETs. Our results explore the worthiness of JVD Si3N4 as gate dielectric for future low power ULSI applications.
 
Publisher IEEE
 
Date 2008-12-08T08:41:15Z
2011-11-27T13:11:28Z
2011-12-15T09:56:38Z
2008-12-08T08:41:15Z
2011-11-27T13:11:28Z
2011-12-15T09:56:38Z
2000
 
Type Article
 
Identifier Proceeding of the IEEE International Integrated Reliability Workshop Final Report, Lake Tahoe, USA, 23-26 October 2000, 29-31
0-7803-6392-2
10.1109/IRWS.2000.911895
http://hdl.handle.net/10054/228
http://dspace.library.iitb.ac.in/xmlui/handle/10054/228
 
Language en