Record Details

Mechanism of drain disturb in SONOS flash EEPROMs

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Mechanism of drain disturb in SONOS flash EEPROMs
 
Creator BHARATH KUMAR, P
SHARMA, RAVINDER
NAIR, PR
NAIR, DR
KAMOHARA, S
MAHAPATRA, S
VASI, J
 
Subject electric charge
ionisation
leakage currents
semiconductor junctions
nitrides
 
Description We investigate the mechanism of drain disturb in SONOS flash memory cells. Our results show that drain disturb can be a serious concern in programmed state and is caused by injection of holes from substrate into the nitride. We identify the key factors responsible for this to be band-to-band tunneling at the drain junction and impact ionization of the channel leakage current.
 
Publisher IEEE
 
Date 2008-12-09T06:23:07Z
2011-11-28T05:47:09Z
2011-12-15T09:56:41Z
2008-12-09T06:23:07Z
2011-11-28T05:47:09Z
2011-12-15T09:56:41Z
2005
 
Type Article
 
Identifier Proceedings of the IEEE 43rd Annual International Reliability Physics Symposium, San Jose, USA, 17-21 April 2005, 186-190
0-7803-8803-8
http://hdl.handle.net/10054/232
http://dspace.library.iitb.ac.in/xmlui/handle/10054/232
 
Language en