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Effect of programming biases on the reliability of CHE and CHISEL flash EEPROMs

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Title Effect of programming biases on the reliability of CHE and CHISEL flash EEPROMs
 
Creator MOHAPATRA, NR
MAHAPATRA, S
RAMGOPAL RAO, V
SHUKURI, S
BUDE, JD
 
Subject computer programming
monte carlo methods
circuit simulation
hot carriers
 
Description The effect of programming biases on the cycling endurance of NOR flash EEPROMs is studied under CHE and CHISEL operation. CHE degradation increases at higher control gate bias (VCG) and is insensitive to changes in drain bias (VD) CHISEL degradation is insensitive to changes in both VCG, and VD. Furthermore, CHISEL always shows lower degradation when compared to CHE under identical bias and similar programming time. The possible physical mechanisms responsible for the above behavior are clarified by using full band Monte-Carlo simulations.
 
Publisher IEEE
 
Date 2009-01-05T03:28:05Z
2011-11-28T06:23:59Z
2011-12-15T09:56:42Z
2009-01-05T03:28:05Z
2011-11-28T06:23:59Z
2011-12-15T09:56:42Z
2003
 
Type Article
 
Identifier Proceedings of the 41st Annual International Reliability Physics Symposium, Dallas, USA, 30 March-4 April 2003, 518-522
0-7803-7649-8
10.1109/RELPHY.2003.1197802
http://hdl.handle.net/10054/531
http://dspace.library.iitb.ac.in/xmlui/handle/10054/531
 
Language en