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On the dispersive versus arrhenius temperature activation of nbti time evolution in plasma nitrided gate oxides: measurements, theory, and implications

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Title On the dispersive versus arrhenius temperature activation of nbti time evolution in plasma nitrided gate oxides: measurements, theory, and implications
 
Creator VARGHESE, D
SAHA, D
MAHAPATRA, S
AHMED, K
NOURI, F
ALAM, M
 
Subject mosfet
hole traps
interface states
semiconductor device reliability
thermal stability
 
Description Negative bias temperature instability (NBTI) is studied in p-MOSFETs having decoupled plasma nitrided (DPN) gate oxides (EOT range of 12 Aring through 22Aring). Threshold voltage shift (DeltaVT) is shown to be primarily due to interface trap generation (DeltaNIT) and significant hole trapping (DeltaNOT) has not been observed. DeltaVT follows power-law time (t) dependence and Arrhenius temperature (T) activation.
 
Publisher IEEE
 
Date 2009-01-05T06:16:09Z
2011-11-28T06:37:42Z
2011-12-15T09:56:43Z
2009-01-05T06:16:09Z
2011-11-28T06:37:42Z
2011-12-15T09:56:43Z
2005
 
Type Article
 
Identifier Proceedings of the IEEE International Electron Devices Meeting Technical Digest, Washington, USA, 5-5 December 2005, 684-687
0-7803-9268-x
10.1109/IEDM.2005.1609444
http://hdl.handle.net/10054/543
http://dspace.library.iitb.ac.in/xmlui/handle/10054/543
 
Language en