Record Details

Mobility degradation due to interface traps in plasma oxynitride PMOS devices

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Mobility degradation due to interface traps in plasma oxynitride PMOS devices
 
Creator ISLAM, AE
MAHETA, VD
DAS, H
MAHAPATRA, S
ALAM, MA
 
Subject mosfet
plasma devices
semiconductor device reliability
 
Description Mobility degradation due to generation of interface traps (Deltamueff(NIT)) is a well-known phenomenon that has been theoretically interpreted by several mobility models. Based on these analysis, there is a general perception that Deltamueff(NIT) is relatively insignificant (compared to Deltamueff due to ionized impurity) and as such can be safely ignored for performance and reliability analysis. Here, we investigate the importance of considering Deltamueff(NIT) for reliability analysis by analyzing a wide variety of plasma oxynitride PMOS devices using both parametric and physical mobility models. We find that contrary to popular belief this correction is fundamentally important for robust and uncorrupted estimates of the key reliability parameters like threshold-voltage shift, lifetime projection, voltage acceleration factor, etc. Therefore, in this paper, we develop a generalized algorithm for estimating Deltamueff(NIT) for plasma oxynitride PMOS devices and systematically explore its implications for NBTI-specific reliability analysis.
 
Publisher IEEE
 
Date 2009-01-05T13:00:12Z
2011-11-28T06:49:57Z
2011-12-15T09:56:44Z
2009-01-05T13:00:12Z
2011-11-28T06:49:57Z
2011-12-15T09:56:44Z
2008
 
Type Article
 
Identifier Proceedings of the IEEE International Reliability Physics Symposium, Phoenix, USA, 27 April-1 May 2008, 87-96
978-1-4244-2049-0
10.1109/RELPHY.2008.4558868
http://hdl.handle.net/10054/544
http://dspace.library.iitb.ac.in/xmlui/handle/10054/544
 
Language en