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Role of inversion layer quantization on sub-bandgap impact ionization in deep-sub-micron n-channel MOSFETs
DSpace at IIT Bombay
View Archive Info| Field | Value | |
| Title |
Role of inversion layer quantization on sub-bandgap impact ionization in deep-sub-micron n-channel MOSFETs
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| Creator |
ANIL, KG
MAHAPATRA, S EISELE, I |
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| Subject |
mosfet
impact ionisation inversion layers |
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| Description |
Impact ionization in n-channel MOSFETs for drain voltages (VD ) below the bandgap voltages (qVD
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| Publisher |
IEEE
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| Date |
2009-01-05T13:00:28Z
2011-11-28T06:54:40Z 2011-12-15T09:56:50Z 2009-01-05T13:00:28Z 2011-11-28T06:54:40Z 2011-12-15T09:56:50Z 2000 |
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| Type |
Article
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| Identifier |
Proceedings of the International Electron Devices Meeting Technical Digest, San Francisco, USA, 10-13 December 2000, 675-678
0-7803-6438-4 10.1109/IEDM.2000.904409 http://hdl.handle.net/10054/546 http://dspace.library.iitb.ac.in/xmlui/handle/10054/546 |
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| Language |
en
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