Record Details

Drain bias dependence of gate oxide reliability in conventional and asymmetrical channel MOSFETs in the low voltage regime

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Drain bias dependence of gate oxide reliability in conventional and asymmetrical channel MOSFETs in the low voltage regime
 
Creator ANIL, KG
MAHAPATRA, S
EISELE, I
RAMGOPAL RAO, V
VASI, J
 
Subject current distribution
dielectric thin films
low-power electronics
doping profiles
 
Description Drain bias dependence of gate oxide
reliability is investigated on conventional
(CON) and Lateral Asymmetric Channel
(LAC) MOSFETs for low drain voltages
that correspond to the real operating voltages
for deep-sub-micron devices. For short
channel devices, the oxide reliability improves
drastically as drain bias increases.
Device simulations showed that the vertical
field distribution in the oxide is asymmetric
for non-zero drain biases and this results
in an asymmetric gate current distribution
with the peak at the source end. By introducing
an intentionally graded doping profile
along the channel (LAC), the asymmetry
in the vertical filed distribution can be
enhanced with consequent improvement in
gate oxide reliability.
 
Publisher IEEE
 
Date 2009-01-05T13:00:37Z
2011-11-28T07:02:12Z
2011-12-15T09:56:50Z
2009-01-05T13:00:37Z
2011-11-28T07:02:12Z
2011-12-15T09:56:50Z
2000
 
Type Article
 
Identifier Proceeding of the 30th European Solid-State Device Research Conference, Cork, Ireland, 11-13 September 2000, 124-127
2-86332-248-6
http://hdl.handle.net/10054/547
http://dspace.library.iitb.ac.in/xmlui/handle/10054/547
 
Language en