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Anhydrous silanization and antibody immobilization on hotwire CVD deposited silicon oxynitride films

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Field Value
 
Title Anhydrous silanization and antibody immobilization on hotwire CVD deposited silicon oxynitride films
 
Creator JOSHI, M
SINGH, S
SWAIN, B
PATIL, SAMADHAN B
DUSANE, RO
RAMGOPAL RAO, V
MUKHERJI, SOUMYA
 
Subject thin films
ellipsometry
fluorescence
spectroscopic analysis
 
Description Hotwire CVD (HWCVD) deposited silicon rich nitride films were treated with O2 plasma using RF plasma setup. The thickness of this oxynitride film was measured using spectroscopic ellipsometry. The film was treated with [3-(2-aminoethyl) aminopropyl]-trimethoxysilane (AEAPS) followed by immobilization of human immunoglobulin (HIgG) on it. Surface morphology at various stages of experimentation was studied using AFM. Antibody immobilized surface is further investigated using fluorescence microscopy.
 
Publisher IEEE
 
Date 2009-01-22T05:57:09Z
2011-11-28T07:13:59Z
2011-12-15T09:56:53Z
2009-01-22T05:57:09Z
2011-11-28T07:13:59Z
2011-12-15T09:56:53Z
2004
 
Type Article
 
Identifier Proceedings of the IEEE INDICON India Annual Conference, Kharagpur, India, 20-22 December 2004, 538-541
0-7803-8909-3
10.1109/INDICO.2004.1497814
http://hdl.handle.net/10054/577
http://dspace.library.iitb.ac.in/xmlui/handle/10054/577
 
Language en