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Plasma process induced abnormal 1/f noise behavior in deep sub-micron MOSFETs

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Title Plasma process induced abnormal 1/f noise behavior in deep sub-micron MOSFETs
 
Creator RAMGOPAL RAO, V
WIJERATNE, G
CHU, D
BROZEK, T
VISWANATHAN, CR
 
Subject mosfet
flicker noise
plasma materials processing
semiconductor device noise
semiconductor device testing
 
Description The effect of plasma damage on the MOSFET's flicker noise properties is examined in this work. We observe an abnormal noise peak in the 1/f noise spectrum at around 2 kHz which is a characteristic of the plasma damage. The dependence of the noise peak on the plasma induced degradation was studied in virgin n- and p-channel MOSFETs and this peak is shown to correlate well with the amount of damage in the p-MOSFETs.
 
Publisher IEEE
 
Date 2009-01-21T06:48:26Z
2011-11-28T07:11:28Z
2011-12-15T09:56:53Z
2009-01-21T06:48:26Z
2011-11-28T07:11:28Z
2011-12-15T09:56:53Z
1998
 
Type Article
 
Identifier Proceedings of the 3rd International Symposium on Plasma Process-Induced Damage, Honolulu, USA, 4-5 June 1998, 124-127
0-9651577-2-5
10.1109/PPID.1998.725590
http://hdl.handle.net/10054/573
http://dspace.library.iitb.ac.in/xmlui/handle/10054/573
 
Language en