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The effects of varying tilt angle of halo implant on the performance of sub 100nm LAC MOSFETs

DSpace at IIT Bombay

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Title The effects of varying tilt angle of halo implant on the performance of sub 100nm LAC MOSFETs
 
Creator SARKAR, P
MALLIK, A
SARKAR, CK
RAMGOPAL RAO, V
 
Subject mosfet
ion implantation
semiconductor device models
 
Description In this paper we systematically investigate the effects of the varying tilt angle of the halo implants on the different device performance parameters of 100 nm lateral asymmetric channel (LAC) MOSFETs. The tilt angle is varied from 5deg to 60deg with twist angle 0deg. Substantial reduction of sub-threshold swing is found for large tilt angles as compared to low angles of halo implant. The device structure, known as lateral asymmetric channel with large angle tilt implant (LACLATI), exhibits better reverse short channel effect and I on/Ioff, and lower junction capacitance.
 
Publisher IEEE
 
Date 2009-01-22T05:58:37Z
2011-11-28T07:16:29Z
2011-12-15T09:56:54Z
2009-01-22T05:58:37Z
2011-11-28T07:16:29Z
2011-12-15T09:56:54Z
2006
 
Type Article
 
Identifier Proceedings of the First International Conference on Industrial and Information Systems, Peradeniya, Sri Lanka, 8-11 August 2006, 115-118
1-4244-0322-7
10.1109/ICIIS.2006.365647
http://hdl.handle.net/10054/582
http://dspace.library.iitb.ac.in/xmlui/handle/10054/582
 
Language en