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A simple and direct method for interface characterization of OFETs

DSpace at IIT Bombay

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Title A simple and direct method for interface characterization of OFETs
 
Creator SRINIVAS, P
TIWARI, SP
RAVAL, HN
RAMESH, RN
CAHYADI, T
MHAISALKAR, SG
RAMGOPAL RAO, V
 
Subject mosfet
dielectric materials
interface states
organic compounds
semiconductor device measurement
silicon compounds
 
Description Multi-frequency transconductance technique is successfully applied in this work for the first time for interface characterization of OFETs. Standard charge pumping measurements are used on silicon MOSFETs for the validation of MFT technique. The method is implemented on pentacene as well as the P3HT based OFETs with SiO2 as the gate dielectric. Our results show interface state densities in the range of 1012/cm2/eV for both the samples. The P3HT films are also shown to have additional trap centres which respond to frequencies above 100 kHz. Our results therefore clearly indicate that the MFT technique is indeed a highly useful technique for interface characterization of OFETs.
 
Publisher IEEE
 
Date 2009-01-29T12:07:31Z
2011-11-28T07:16:59Z
2011-12-15T09:56:55Z
2009-01-29T12:07:31Z
2011-11-28T07:16:59Z
2011-12-15T09:56:55Z
2007
 
Type Article
 
Identifier Proceedings of the 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits, Bangalore, India, 11-13 July 2007, 306-309
978-1-4244-1015-6
10.1109/IPFA.2007.4378107
http://hdl.handle.net/10054/583
http://dspace.library.iitb.ac.in/xmlui/handle/10054/583
 
Language en