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Metallated porphyrin self assembled monolayers as Cu diffusion barriers for the nano-sale CMOS technologies

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Title Metallated porphyrin self assembled monolayers as Cu diffusion barriers for the nano-sale CMOS technologies
 
Creator KHADERBAD, MA
NAYAK, K
YEDUKONDALU, M
RAVIKANTH, M
MUKHERJI, SOUMYA
RAMGOPAL RAO, V
 
Subject mos capacitors
ulsi
atomic force microscopy
copper
diffusion barriers
integrated circuit interconnections
 
Description In this paper we have studied the application of metallated porphyrin self assembled monolayers (SAMs) as Cu diffusion barriers for ultra-large scale integration (ULSI) CMOS applications. The results for Cu/SiO2/Si and Cu/SAM/SiO2/Si MOS CAP structures are compared through a detailed electrical characterization of threshold voltage shift using bias-temperature studies. Material characterization and surface morphology is studied using UV absorption spectra and AFM. Our results show that metallated porphyrin SAMs can be effectively used as Cu diffusion barriers for ULSI applications.
 
Publisher IEEE
 
Date 2009-01-29T12:07:59Z
2011-11-28T07:18:00Z
2011-12-15T09:56:55Z
2009-01-29T12:07:59Z
2011-11-28T07:18:00Z
2011-12-15T09:56:55Z
2008
 
Type Article
 
Identifier Proceedings of the 8th IEEE Conference on Nanotechnology, Arlington, USA, 18-21 August 2008, 167-170
978-1-4244-2103-9
10.1109/NANO.2008.56
http://hdl.handle.net/10054/585
http://dspace.library.iitb.ac.in/xmlui/handle/10054/585
 
Language en