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Sub-threshold swing degradation due to localized charge storage in SONOS memories

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Title Sub-threshold swing degradation due to localized charge storage in SONOS memories
 
Creator TOMAR, BHAWNA
RAMGOPAL RAO, V
 
Subject capacitance
circuit simulation
dielectric thin films
integrated circuit modelling
integrated memory circuits
random-access storage
 
Description This paper discusses the effect of localized charge storage on sub-threshold swing and threshold voltage in silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory cells. By analyzing the change in potential contours, it has been shown that the change in sub-threshold swing is correlated to fringing of electric field lines, and hence to the gate-to-substrate capacitance.
 
Publisher IEEE
 
Date 2009-01-22T05:56:45Z
2011-11-28T07:12:59Z
2011-12-15T09:56:56Z
2009-01-22T05:56:45Z
2011-11-28T07:12:59Z
2011-12-15T09:56:56Z
2004
 
Type Article
 
Identifier Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, Taiwan, 8 July 2004, 251-253
0-7803-8454-7
10.1109/IPFA.2004.1345613
http://hdl.handle.net/10054/576
http://dspace.library.iitb.ac.in/xmlui/handle/10054/576
 
Language en