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Optimization of single halo p-MOSFET implant parameters for improved analog performance and reliability

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Title Optimization of single halo p-MOSFET implant parameters for improved analog performance and reliability
 
Creator JHA, NK
RAMGOPAL RAO, V
WOO, JCS
 
Subject semiconductor device models
ion implantation
doping profiles
mosfet
 
Description The effect of Channel Hot Carrier (CHC) stress
under typical analog operating conditions is studied for
p-MOSFETs. Our detailed characterization results show
that Single Halo devices not only show improved
performance, but also are immune to CHC degradation
under various operating conditions.
 
Publisher IEEE
 
Date 2009-01-22T05:57:27Z
2011-11-28T07:14:29Z
2011-12-15T09:56:56Z
2009-01-22T05:57:27Z
2011-11-28T07:14:29Z
2011-12-15T09:56:56Z
2002
 
Type Article
 
Identifier Proceeding of the 32nd European Solid-State Device Research Conference, Firenze, Italy, 24-26 September 2002, 603-606
88-900847-8-2
http://hdl.handle.net/10054/578
http://dspace.library.iitb.ac.in/xmlui/handle/10054/578
 
Language en