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Capacitance degradation due to fringing field in deep sub-micron MOSFETs with High-K gate dielectrics

DSpace at IIT Bombay

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Title Capacitance degradation due to fringing field in deep sub-micron MOSFETs with High-K gate dielectrics
 
Creator INANI, A
RAMGOPAL RAO, V
CHENG, B
ZEITZOFF, P
WOO, JCS
 
Subject capacitance
mosfet
semiconductor device models
 
Description High-K gate dielectrics have been under extensive investigation for use in sub -100nm MOSFET's to suppress gate leakage.However,thicker gate dielectrics can result in degradation of the electrical performance due to increased fringing fields from the gate to source/drain. In this paper the capacitance degradation resulting from this effect is analyzed & simple technique to model this effect is presented.
 
Publisher IEEE
 
Date 2009-01-22T05:57:43Z
2011-11-28T07:14:59Z
2011-12-15T09:56:56Z
2009-01-22T05:57:43Z
2011-11-28T07:14:59Z
2011-12-15T09:56:56Z
1999
 
Type Article
 
Identifier Proceeding of the 29th European Solid-State Device Research Conference (V 1), Leuven, Belgium, 13-15 September 1999, 160-163
2-86332-245-1
http://hdl.handle.net/10054/579
http://dspace.library.iitb.ac.in/xmlui/handle/10054/579
 
Language en