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A new observation of enhanced bias temperature instability in thin gate oxide p-MOSFETs

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Title A new observation of enhanced bias temperature instability in thin gate oxide p-MOSFETs
 
Creator MAHAPATRA, S
BHARATH KUMAR, P
ALAM, MA
 
Subject mosfet
diffusion
hydrogen
interface states
semiconductor device models
thermal stability
 
Description Bias temperature instability (BTI) and its underlying physical mechanism are studied for thin gate oxide MOSFETs. For p-MOSFETs stressed in inversion for a long-time, BTI increase is observed at high stress temperature. This is shown to be due to higher interface trap generation because of faster hydrogen diffusion in the gate poly. Enhanced BTI affects device lifetime and is strongly influenced by gate oxide scaling, as discussed.
 
Publisher IEEE
 
Date 2008-12-15T10:53:42Z
2011-11-27T13:58:32Z
2011-12-15T09:56:57Z
2008-12-15T10:53:42Z
2011-11-27T13:58:32Z
2011-12-15T09:56:57Z
2003
 
Type Article
 
Identifier Proceeding of the IEEE International Electron Devices Meeting Technical Digest, Washington DC, USA, 8-10 December 2003, 14.2.1-14.2.4.
0-7803-7872-5
10.1109/IEDM.2003.1269293
http://hdl.handle.net/10054/331
http://dspace.library.iitb.ac.in/xmlui/handle/10054/331
 
Language en