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Performance and reliability of single halo deep sub-micron p-MOSFETs for analog applications

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Title Performance and reliability of single halo deep sub-micron p-MOSFETs for analog applications
 
Creator JHA, NK
BAGHINI, MS
RAMGOPAL RAO, V
 
Subject mosfet
hot carriers
ion implantation
semiconductor device reliability
thermal stresses
 
Description The effect of channel hot carrier (CHC) stress under typical analog operating conditions is studied for the first time for single halo (SH) p-MOSFET devices. The SH devices show less degradation under identical operating conditions compared to conventional MOSFETs. The effect of SH implant parameters on device degradation is presented.
 
Publisher IEEE
Xiang Luo Sarkar, S.
 
Date 2009-01-29T12:10:22Z
2011-11-28T07:20:00Z
2011-12-15T09:56:58Z
2009-01-29T12:10:22Z
2011-11-28T07:20:00Z
2011-12-15T09:56:58Z
2002
 
Type Article
 
Identifier Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, Singapore, 8-12 July 2002, 35-39
0-7803-7416-9
10.1109/IPFA.2002.1025608
http://hdl.handle.net/10054/591
http://dspace.library.iitb.ac.in/xmlui/handle/10054/591
 
Language en