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Electrostatics and its effect on spatial distribution of tunnel current in metal Nanocrystal flash memories

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Title Electrostatics and its effect on spatial distribution of tunnel current in metal Nanocrystal flash memories
 
Creator NAINANI, ANEESH
ROY, ARUNASHU
SINGH, PK
MUKHOPADHYAY, GAUTAM
VASI, J
 
Subject flash memories
tunnelling
electrostatic
probability
 
Description In this paper we present an analytic formulation of the electrostatics of metal based Nanocrystal (NC) flash memory, and study its effect on tunnelling probabilities. We establish that asymmetry in field distribution resulting from the electrostatics enhances the field near the NC. A spatial distributiion of tunnelling probabilities is presented for the first time. This analytical formulation can be easily coupled with the Schrodinger's equation to describe the Program/Erase dynamics of the NC,greatly reducing the computational time.
 
Publisher ICMTD
 
Date 2009-02-13T08:53:59Z
2011-11-28T07:26:01Z
2011-12-15T09:57:00Z
2009-02-13T08:53:59Z
2011-11-28T07:26:01Z
2011-12-15T09:57:00Z
2007
 
Type Article
 
Identifier Proceedings of the 2nd International Conference on Memory Technology and Design, Giens, France, 7-10 May 2007, 251-254
http://hdl.handle.net/10054/611
http://dspace.library.iitb.ac.in/xmlui/handle/10054/611
 
Language en