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A new drain voltage enhanced NBTI degradation mechanism

DSpace at IIT Bombay

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Field Value
 
Title A new drain voltage enhanced NBTI degradation mechanism
 
Creator JHA, NEERAJ K
REDDY, PS
RAMGOPAL RAO, V
 
Subject mosfet
interface states
semiconductor device reliability
thermal stability
 
Description Interface state generation and threshold voltage degradation for various channel length devices stressed at different drain bias has been studied. It is found that NBTI effect decreases at Low drain bias due to decrease in effective gate bias near the drain edge. The subsequent increase in degradation at higher drain stress bias is due to non-uniform generation of interface states and subsequent diffusion o f generated hydrogen species along the length of the channel. This effect is more pronounced for short channel devices stressed at high temperatures and high drain bias.
 
Publisher IEEE
 
Date 2008-12-11T06:01:34Z
2011-11-28T07:41:04Z
2011-12-15T09:57:06Z
2008-12-11T06:01:34Z
2011-11-28T07:41:04Z
2011-12-15T09:57:06Z
2005
 
Type Article
 
Identifier Proceedings of the 43rd Annual IEEE International Reliability Physics Symposium, San Jose, USA, 17-21 April 2005, 524-528
0-7803-8803-8
http://hdl.handle.net/10054/291
http://dspace.library.iitb.ac.in/xmlui/handle/10054/291
 
Language en