Study of degradation in channel initiated secondary electron injection regime
DSpace at IIT Bombay
View Archive InfoField | Value | |
Title |
Study of degradation in channel initiated secondary electron injection regime
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Creator |
MOHAPATRA, NR
MAHAPATRA, S RAMGOPAL RAO, V |
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Subject |
flash memory
stresses secondary electron emmission |
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Description |
This paper analyzes the Channel Initiated Secondary Electron injection mechanism and the resulting hot-carrier degradation in deep sub-micron n-channel MOSFETs. The correlation between gate (IG) and substrate current (IB) has been studied for different values of substrate bias. Stress and charge pumping measurements have been carried out to study the degradation under identical substrate bias and gate current conditions. Results show that under identical gate current (programming time for flash memory cells), the degradation is less for higher negative substrate bias. |
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Publisher |
IEEE
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Date |
2009-01-05T03:28:23Z
2011-11-28T02:01:58Z 2011-12-15T09:57:34Z 2009-01-05T03:28:23Z 2011-11-28T02:01:58Z 2011-12-15T09:57:34Z 2001 |
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Type |
Article
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Identifier |
Proceeding of the 31st European Solid-State Device Research Conference, Nuremberg, Germany, 11-13 September 2001, 291-294
2-914601-01-8 http://hdl.handle.net/10054/533 http://dspace.library.iitb.ac.in/xmlui/handle/10054/533 |
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Language |
en
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