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Study of degradation in channel initiated secondary electron injection regime

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Field Value
 
Title Study of degradation in channel initiated secondary electron injection regime
 
Creator MOHAPATRA, NR
MAHAPATRA, S
RAMGOPAL RAO, V
 
Subject flash memory
stresses
secondary electron emmission
 
Description This paper analyzes the Channel Initiated
Secondary Electron injection mechanism
and the resulting hot-carrier degradation
in deep sub-micron n-channel MOSFETs.
The correlation between gate (IG) and
substrate current (IB) has been studied for
different values of substrate bias. Stress
and charge pumping measurements have
been carried out to study the degradation
under identical substrate bias and gate
current conditions. Results show that under
identical gate current (programming time
for flash memory cells), the degradation is
less for higher negative substrate bias.
 
Publisher IEEE
 
Date 2009-01-05T03:28:23Z
2011-11-28T02:01:58Z
2011-12-15T09:57:34Z
2009-01-05T03:28:23Z
2011-11-28T02:01:58Z
2011-12-15T09:57:34Z
2001
 
Type Article
 
Identifier Proceeding of the 31st European Solid-State Device Research Conference, Nuremberg, Germany, 11-13 September 2001, 291-294
2-914601-01-8
http://hdl.handle.net/10054/533
http://dspace.library.iitb.ac.in/xmlui/handle/10054/533
 
Language en