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Mechanism of negative bias temperature instability in CMOS devices: degradation, recovery and impact of nitrogen

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Field Value
 
Title Mechanism of negative bias temperature instability in CMOS devices: degradation, recovery and impact of nitrogen
 
Creator MAHAPATRA, S
BHARATH KUMAR, P
DALEI, TR
SANA, D
ALAM, MA
 
Subject cmos integrated circuit
electron traps
integrated circuit reliability
interface phenomena
nitridation
 
Description NBTI mechanism is discussed for a wide range of stress conditions. Conditions for interface and bulk-trap generation are shown. The bias, time and temperature dependence of interface-trap buildup and recovery are discussed using the framework of the R-D model. The AC frequency dependence and impact of gate oxide nitridation are also discussed.
 
Publisher IEEE
 
Date 2008-12-15T10:56:36Z
2011-11-27T14:35:45Z
2011-12-15T09:58:01Z
2008-12-15T10:56:36Z
2011-11-27T14:35:45Z
2011-12-15T09:58:01Z
2004
 
Type Article
 
Identifier Proceedings of the IEEE International Electron Devices Meeting Technical Digest, San Francisco, USA, 13-15 December 2004, 105-108.
0-7803-8684-1
10.1109/IEDM.2004.1419079
http://hdl.handle.net/10054/334
http://dspace.library.iitb.ac.in/xmlui/handle/10054/334
 
Language en