Performance and reliability of high density flash EEPROMs under CHISEL programming operation
DSpace at IIT Bombay
View Archive InfoField | Value | |
Title |
Performance and reliability of high density flash EEPROMs under CHISEL programming operation
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Creator |
MAHAPATRA, S
SHUKURI, S BUDE, JD |
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Subject |
flash memories
integrated circuit reliability integrated memory circuits integrated circuit design |
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Description |
We demonstrate CHISEL programming operation of fully scaled high-density flash EEPROMs. Single cell program and erase characteristics show reliable. operation in terms of programming disturbs and cycling induced degradation. Program and erase operation of high-density arrays show a unique post-erase operation, tight threshold voltage distribution and over 10 years of data retention even after 105 program/erase cycles. Results are presented showing the feasibility of CHISEL programming operation for deeply scaled high-density flash EEPROMs. |
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Publisher |
IEEE
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Date |
2008-12-15T10:30:12Z
2011-11-28T09:24:09Z 2011-12-15T09:58:08Z 2008-12-15T10:30:12Z 2011-11-28T09:24:09Z 2011-12-15T09:58:08Z 2002 |
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Type |
Article
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Identifier |
Proceeding of the 32nd European Solid-State Device Research Conference, Scotland, UK, 24-26 September 2002, 351-354.
88-900847-8-2 http://hdl.handle.net/10054/320 http://dspace.library.iitb.ac.in/xmlui/handle/10054/320 |
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Language |
en
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