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Performance and reliability of high density flash EEPROMs under CHISEL programming operation

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Title Performance and reliability of high density flash EEPROMs under CHISEL programming operation
 
Creator MAHAPATRA, S
SHUKURI, S
BUDE, JD
 
Subject flash memories
integrated circuit reliability
integrated memory circuits
integrated circuit design
 
Description We demonstrate CHISEL programming operation of
fully scaled high-density flash EEPROMs. Single cell program and erase characteristics show reliable.
operation in terms of programming disturbs and cycling
induced degradation. Program and erase operation of
high-density arrays show a unique post-erase operation,
tight threshold voltage distribution and over 10 years of
data retention even after 105 program/erase cycles.
Results are presented showing the feasibility of CHISEL
programming operation for deeply scaled high-density
flash EEPROMs.
 
Publisher IEEE
 
Date 2008-12-15T10:30:12Z
2011-11-28T09:24:09Z
2011-12-15T09:58:08Z
2008-12-15T10:30:12Z
2011-11-28T09:24:09Z
2011-12-15T09:58:08Z
2002
 
Type Article
 
Identifier Proceeding of the 32nd European Solid-State Device Research Conference, Scotland, UK, 24-26 September 2002, 351-354.
88-900847-8-2
http://hdl.handle.net/10054/320
http://dspace.library.iitb.ac.in/xmlui/handle/10054/320
 
Language en