Analysis of floating body effects in thin film SOI MOSFETs using the GIDL current technique
DSpace at IIT Bombay
View Archive InfoField | Value | |
Title |
Analysis of floating body effects in thin film SOI MOSFETs using the GIDL current technique
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Creator |
DUNGA, MOHAN V
AATISH KUMAR RAMGOPAL RAO, V |
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Subject |
computer simulation
leakage currents gates (transistor) thin films |
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Description |
In this paper, we present an analysis of floating body effects in lateral asymmetric channel (LAC) and conventional homogeneously doped channel (uniform) SOI MOSFETs using a novel gate-induced-drain-leakage (GIDL) current technique. The parasitic bipolar current gain β has been experimentally measured for LAC and uniform SOI MOSFETs using the GIDL current technique. The lower parasitic bipolar current gain observed in LAC SOI MOSFETs is explained with the help of 2D device simulations.
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Publisher |
IEEE
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Date |
2008-12-12T04:47:53Z
2011-11-28T09:27:09Z 2011-12-15T09:58:13Z 2008-12-12T04:47:53Z 2011-11-28T09:27:09Z 2011-12-15T09:58:13Z 2001 |
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Type |
Article
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Identifier |
Proceedings of the 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits, Singapore, 9-13 July 2001, 254-257
0-7803-6675-1 10.1109/IPFA.2001.941497 http://hdl.handle.net/10054/310 http://dspace.library.iitb.ac.in/xmlui/handle/10054/310 |
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Language |
en
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