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Analysis of floating body effects in thin film SOI MOSFETs using the GIDL current technique

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Title Analysis of floating body effects in thin film SOI MOSFETs using the GIDL current technique
 
Creator DUNGA, MOHAN V
AATISH KUMAR
RAMGOPAL RAO, V
 
Subject computer simulation
leakage currents
gates (transistor)
thin films
 
Description In this paper, we present an analysis of floating body effects in lateral asymmetric channel (LAC) and conventional homogeneously doped channel (uniform) SOI MOSFETs using a novel gate-induced-drain-leakage (GIDL) current technique. The parasitic bipolar current gain β has been experimentally measured for LAC and uniform SOI MOSFETs using the GIDL current technique. The lower parasitic bipolar current gain observed in LAC SOI MOSFETs is explained with the help of 2D device simulations.
 
Publisher IEEE
 
Date 2008-12-12T04:47:53Z
2011-11-28T09:27:09Z
2011-12-15T09:58:13Z
2008-12-12T04:47:53Z
2011-11-28T09:27:09Z
2011-12-15T09:58:13Z
2001
 
Type Article
 
Identifier Proceedings of the 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits, Singapore, 9-13 July 2001, 254-257
0-7803-6675-1
10.1109/IPFA.2001.941497
http://hdl.handle.net/10054/310
http://dspace.library.iitb.ac.in/xmlui/handle/10054/310
 
Language en