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Hot-carrier induced interface degradation in jet vapor deposited SiN MNSFETs as studied by a novel charge pumping technique

DSpace at IIT Bombay

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Title Hot-carrier induced interface degradation in jet vapor deposited SiN MNSFETs as studied by a novel charge pumping technique
 
Creator MAHAPATRA, S
RAMGOPAL RAO, V
PARIKH, CD
VASI, J
CHENG, B
KHARE, M
WOO, JCS
 
Subject silicon compounds
vapour deposition
interface states
electron traps
 
Description Metal-Nitride-Semiconductor FETs with channel lengths down to 100 nm & anovel Jet Vapor Deposited (JVD) SiN gate dielectric are fabricated and characterised for thier hot-carrier reliability.A novel charge pumping technique is employed to characterize the stress induced interface degradation of such MNSFETs in comparison to MOSFETs having thermal SiO2 gate oxide.Under identical substrate current during stress,MNSFETs show less interface-state generation and resulting drain current degradation for various channels lengths,stress time and supply voltage.The time and voltage dependence of hot-carrier degradation has been found to be distinctly different for MNSFETs compared to conventional SiO2 MOSFETs.
 
Publisher IEEE
 
Date 2009-01-05T03:28:12Z
2011-11-28T01:57:15Z
2011-12-15T09:58:18Z
2009-01-05T03:28:12Z
2011-11-28T01:57:15Z
2011-12-15T09:58:18Z
1999
 
Type Article
 
Identifier Proceedings of the 29th European Solid-State Device Research Conference (V 1), Leuven, Belgium, 13-15 September 1999, 592-595
2-86332-245-1
http://hdl.handle.net/10054/532
http://dspace.library.iitb.ac.in/xmlui/handle/10054/532
 
Language en