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Characterization of lateral asymmetric channel (LAC) thin film SOI MOSFETs

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Title Characterization of lateral asymmetric channel (LAC) thin film SOI MOSFETs
 
Creator NAJEEB-UD-DIN HAKIM
DUNGA, MV
AATISH KUMAR
RAMGOPAL RAO, V
VASI, J
 
Subject mosfet
leakage currents
silicon-on-insulator
 
Description This paper presents results on the characterization of Lateral Asymmetric Channel (LAC) thin film silicon-on-insulator (SOI) MOSFETs. These devices are compared with conventional SOI MOSFETs having uniform channel doping. The measurements have been taken for a number of channel lengths, silicon film thicknesses, and tilt angles of implantation. The aspects studied include threshold voltage roll-off, kink effect, gate induced drain leakage (GIDL) and parasitic bipolar transistor action. Measurements have been supplemented by device simulations. The LAC devices show excellent characteristics, with many advantages over the conventional devices.
 
Publisher IEEE
 
Date 2008-12-08T09:13:21Z
2011-11-27T16:45:59Z
2011-12-15T09:58:21Z
2008-12-08T09:13:21Z
2011-11-27T16:45:59Z
2011-12-15T09:58:21Z
2001
 
Type Article
 
Identifier Proceedings of the 6th International Conference on Solid-State and Integrated-Circuit Technology (V 1), Shanghai, China, 22-25 October 2001, 655-660
0-7803-6520-8
10.1109/ICSICT.2001.981564
http://hdl.handle.net/10054/230
http://dspace.library.iitb.ac.in/xmlui/handle/10054/230
 
Language en