Characterization of lateral asymmetric channel (LAC) thin film SOI MOSFETs
DSpace at IIT Bombay
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Title |
Characterization of lateral asymmetric channel (LAC) thin film SOI MOSFETs
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Creator |
NAJEEB-UD-DIN HAKIM
DUNGA, MV AATISH KUMAR RAMGOPAL RAO, V VASI, J |
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Subject |
mosfet
leakage currents silicon-on-insulator |
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Description |
This paper presents results on the characterization of Lateral Asymmetric Channel (LAC) thin film silicon-on-insulator (SOI) MOSFETs. These devices are compared with conventional SOI MOSFETs having uniform channel doping. The measurements have been taken for a number of channel lengths, silicon film thicknesses, and tilt angles of implantation. The aspects studied include threshold voltage roll-off, kink effect, gate induced drain leakage (GIDL) and parasitic bipolar transistor action. Measurements have been supplemented by device simulations. The LAC devices show excellent characteristics, with many advantages over the conventional devices.
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Publisher |
IEEE
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Date |
2008-12-08T09:13:21Z
2011-11-27T16:45:59Z 2011-12-15T09:58:21Z 2008-12-08T09:13:21Z 2011-11-27T16:45:59Z 2011-12-15T09:58:21Z 2001 |
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Type |
Article
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Identifier |
Proceedings of the 6th International Conference on Solid-State and Integrated-Circuit Technology (V 1), Shanghai, China, 22-25 October 2001, 655-660
0-7803-6520-8 10.1109/ICSICT.2001.981564 http://hdl.handle.net/10054/230 http://dspace.library.iitb.ac.in/xmlui/handle/10054/230 |
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Language |
en
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