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Issues related to nuclear radiation effects on semiconductor devices

DSpace at IIT Bombay

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Field Value
 
Title Issues related to nuclear radiation effects on semiconductor devices
 
Creator KULKARNI, RD
GUPTA, AK
AGARWAL, VIVEK
 
Subject mosfet
annealing
gamma-ray effects
insulated gate bipolar transistors
ionisation
semiconductor device testing
 
Description The nuclear radiation damage due to displacement and ionisation effects has been observed on semiconductor diodes and transistors. The devices were irradiated with gamma rays of integrated dose value of 100, 300 and 500 krads with a dose rate of 100 krads/hour. A decrease in the breakdown voltage capacity and increase in leakage current were observed for the rectifier diodes while the common emitter current gain of power transistors reduced to a low value and was found to be highly sensitive to the low dose rate values. Controlled annealing shows improvement in the post-radiation integrity of the lattice through recombination. Utilising the experimental database, the mathematical modelling of nuclear effects can predict life of the devices. Radiation hard power electronic system design approach is discussed.
 
Publisher IEEE
 
Date 2008-12-17T08:01:47Z
2011-11-27T15:13:04Z
2011-12-15T09:58:22Z
2008-12-17T08:01:47Z
2011-11-27T15:13:04Z
2011-12-15T09:58:22Z
2000
 
Type Article
 
Identifier Proceedings of the IEEE International Conference on Industrial Technology (V 2), Goa, India, 19-22 January 2000, 609-614
0-7803-5812-0
http://hdl.handle.net/10054/367
http://dspace.library.iitb.ac.in/xmlui/handle/10054/367
 
Language en