Record Details

Endurance and retention characteristics of SONOS EEPROMs operated using BTBT induced hot hole erase

DSpace at IIT Bombay

View Archive Info
 
 
Field Value
 
Title Endurance and retention characteristics of SONOS EEPROMs operated using BTBT induced hot hole erase
 
Creator BHARATH KUMAR, P
MURAKAMI, E
KAMOHARA, S
MAHAPATRA, S
 
Subject hot electrons
optimization
electron tunneling
 
Description Endurance and retention of SONOS EEPROMs operated using channel hot electron injection (CHEI) and band-to-band tunneling (BTBT) induced hot hole injection (HHI) are studied. Cycling window closure is improved by optimizing erase bias, and its effect on cell degradation is studied. The retention loss in program state is studied under different erase conditions and correlated to cell degradation caused by HHI.
 
Publisher IEEE
 
Date 2008-12-15T10:37:59Z
2011-11-27T12:25:54Z
2011-12-15T09:58:24Z
2008-12-15T10:37:59Z
2011-11-27T12:25:54Z
2011-12-15T09:58:24Z
2006
 
Type Article
 
Identifier Proceedings of the IEEE International Reliability Physics Symposium, San Jose, USA, March 2006, 699-700.
0-7803-9499-2
10.1109/RELPHY.2006.251331
http://hdl.handle.net/10054/324
http://dspace.library.iitb.ac.in/xmlui/handle/10054/324
 
Language en